| PART |
Description |
Maker |
| RJK03N2DPA |
30V, 40A, 4.0m max Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N1DPA |
30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| STD35NF3LL STD35NF3LL-1 STD35NF3LLT4 |
N-CHANNEL 30V - 0.014 ohm - 35A IPAK/DPAK STripFETII POWER MOSFET
N-CHANNEL 30V - 0.014 ohm - 35A IPAK/DPAK STripFET⑩ II POWER MOSFET
N-CHANNEL 30V - 0.014 ohm - 35A IPAK/DPAK STripFET II POWER MOSFET
N-CHANNEL 30V - 0.014 OHM - 35A IPAK/DPAK STRIPFET II POWER MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F370 |
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET（减振钢板基本\u003d 30V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 90A型?
Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| FDMS8672S |
N-Channel PowerTrench SyncFET 30V, 35A, 5mohm
|
FAIRCHILD[Fairchild Semiconductor]
|
| STD35NF3LL07 STD35NF3LLT4 D35NF3LL STD35NF3LL |
N-channel 30V - 0.014ohm - 35A - DPAK STripFET TM II Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| CDBU0320-HF CDBU0340-HF CDBU0330-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=20V, V-R=20V, I-O=0.35A
Halogen Free Schottky Barrier Diodes, V-RRM=40V, V-R=40V, I-O=0.35A
Halogen Free Schottky Barrier Diodes, V-RRM=30V, V-R=30V, I-O=0.35A
|
Comchip Technology
|
| RJJ0315DPA-15 |
-30V, -35A, 5.9mΩmax. P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK0655DPB RJK0655DPB-00-J5 RJK0655DPB-15 |
60V, 35A, 6.7m max. Silicon N Channel Power MOS FET Power Switching
60V, 35A, 6.7m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| FMC7G20US60 |
IGBT
Compact & Complex Module
Function Generator; Bandwidth Max:20MHz; Amplitude Accuracy :0.01dB; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| DTB743EE09 |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
